蔡畅，博士，副教授
邮箱：caichang@gzhu.edu.cn
办公室：行政西前座548
蔡畅，博士，副教授，2021年7月至复旦大学从事科研工作。2024年加入beat365中国官方网站beat365中国官方网站。主要研究高可靠人工智能芯片与系统设计、纳米器件的辐射效应、可编程器件的软件防护技术、元器件地面辐照与星载实验等。近五年，发表第一或通讯作者论文三十余篇；申请发明专利十余项；近三年，作为项目或课题负责人主持国家级、省部级等科研任务。参与教育部新一代集成电路技术集成攻关大平台-亿门级FPGA产品项目建设；参与高可靠数字芯片研发相关ZF、XP、预研等课题。
▍课程
半导体器件、数字集成电路设计、系统级可编程芯片设计
▍主持重要科研项目
国家工业和信息化部高质量发展专项 2022-2024
国家自然科学基金青年基金 2023-2025
GF XXX基金 2022-2024
广东省自然科学基金面上项目 2025-2027
广州市科学技术局项目 2025-2026
上海复旦微电子集团股份有限公司技术研发项目 2023-2025
中国空间技术研究院技术研发项目 2023-2024
复旦大学人才项目 2021-2022
▍主持其他类型课题
作为负责人承担多项高校合作项目、教学类项目、基础研究项目等
▍参与重要科研项目
国家教育部“新一代集成电路技术集成攻关大平台”等。
▍主要论文
1. Chang Cai, Tianqi Liu, Peixiong Zhao, Xue Fan, Hongyang Huang, et al. Multiple Layout-Hardening Comparation of SEU Mitigated Filp-Flops in 22 nm UTBB FD-SOI Technology, IEEE Transactions on Nuclear Science, vol. 67, no. 1, pp. 374-381, Jan. 2020.
2. Chang Cai, et al. SEU Tolerance Improvement in SRAM Based on a Simple 8T Hardened Cell, Microelectronics Reliability. 100–101 (2019) 113322.
3. Chang Cai, Tianqi Liu, Xiaoyuan Li, Jie Liu, Zhangang Zhang, Chao Geng, Peixiong Zhao, Dongqing Li, Bing Ye, Qinggang Ji, Lihua Mo. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs, Nucl. Sci. Tech. 2019, 30:80.
4. Chang Cai, Bingxu Ning, Xue Fan, et al. SEU Sensitivity and Large Spacing TMR Efficiency of Kintex-7 and Virtex-7 FPGAs. Science China Information Sciences. Vol. 65 129402, 2022.
5. Shuai Gao, Xinyu Li, Shiwei Zhao, Ze He, Bing Ye, Li Cai, Youmei Sun, Guoqing Xiao, Chang Cai*, Jie Liu, Heavy Ion Induced MCUs in 28 nm SRAM-based FPGAs: Upset Proportions, Classifications, and Pattern Shapes. Nucl. Sci. Tech. 2022, 33(12):161.
6. Chang Cai, Yuzhu Liu, Minchi Hu, Gengsheng Chen and Jun Yu, Characterization of LDO Induced Increment of SEE Sensitivity for 22 nm FDSOI SRAM, IEEE Trans. Device Mater. Reliab., 2023, 23(4): 537-543.
7. Chang Cai, Xue Fan, Jie Liu, Dongqing Li, Tianqi Liu, Lingyun Ke, Peixiong Zhao and Ze He. Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs, Electronics, 2019, 8(3), 323.
8. Chang Cai, Ze He, Tianqi Liu, et al. Characterization of Heavy Ion Induced SET Features in 22 nm FD-SOI Testing Circuits. IEEE Access. vol. 8, pp. 45378-45389, 2020.
9. Shu Wang#, Chang Cai#(co-first author), Bingxu Ning, Ze He, Zhiqin Huang, Lingyan Xu, Mingjie Shen, Liewei Xu, Gengsheng Chen, Measurement and evaluation of the Single Event Effects of high-performance SerDes circuits, NUCL INSTRUM METH A, Volume 1012, 2021, 165618.
10. Chang Cai, Shuai Gao, Peixiong Zhao, Jian Yu, Kai Zhao, et al, SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA, Electronics. 2019, 8(12), 1531.
11. Jian Yu, Chang Cai*, Bingxu Ning, Shuai Gao, Tianqi Liu, Liewei Xu, Mingjie Shen, Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system. Microelectronics Reliability. 126. 2021. 114340.
12. Ze He, Chang Cai*, Tianqi Liu, Bing Ye, Lihua Mo, Jie Liu. Heavy ion and proton induced single event upsets in 3D SRAM. Microelectronics Reliability. 2020, 114: 113854.
13. Yaqing Chi, Chang Cai*, Ze He, Zhenyu Wu, Yahao Fang, Jianjun Chen and Bin Liang. SEU Tolerance Efficiency of Multiple Layout-Hardened 28 nm DICE D Flip-Flops. Electronics, 2022, 11(7), 972.
14. Yaqing Chi, Chang Cai*, Li Cai. Radiation Effects of Advanced Electronic Devices and Circuits. Electronics, 2024, 13(6), 1073.
15. Chang Cai, Tianqi Liu, Jie Liu, Gengsheng Chen, Luchang Ding, Kai Zhao, Bingxu Ning, and Mingjie Shen, Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs, IEEE IRPS, 2020, pp. 1-5.
16. Chang Cai, Luchang Ding, Ze He, Jian Yu, Jie Liu, Jiyuan Bai, Gengsheng Chen, Jun Yu. Simulation of SEU Response of Advanced 20 nm FDSOI SRAMs, IEEE ASICON, Kunming, China, 2021, pp. 1-4.
17. Jing Zhang, Gengsheng Chen, Luchang Ding, Xin Fan, Zehao Wu, Chang Cai*, Hardware-friendly Block Variable-length Sampling Pruning for Graph Neural Networks, IEEE MSCAS, 2023. 06-09 August 2023. pp. 1030-1034
18. Luchang Ding, Jing Zhang, Chang Wu, Chang Cai* and Gengsheng Chen, "Real-Time Image Inpainting using PatchMatch Based Two-Generator Adversarial Networks with Optimized Edge Loss Function," IEEE ISCAS, 2022, pp. 3145-3149.
19. Chang Cai, et al. Evaluation of SEU Sensitivity in Hardened FPGA on Layout-based Sensitive Volume Method, IEEE ICREED. 2019. 1-3.
20. Luchang Ding, Chang Cai*, Gengsheng Chen, Zehao Wu, Jing Zhang, Chang Wu, Jun Yu, Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results, IEEE ISCAS, 2022, pp. 2281-2285.
